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LMN400E01
400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET General Description
NEW PRODUCT
*
LMN400E01 is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete pass transistor with stable VCE(SAT) which does not depend on input voltage and can support continuous maximum current of 400 mA. It also contains an ESD protected discrete N-MOSFET that can be used as control. The component can be used as a part of a circuit or as a stand alone discrete device.
6 5 4
1 2 3
Features
* * * * * *
Voltage Controlled Small Signal Switch N-MOSFET with ESD Gate Protection Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free By Design/ROHS Compliant (Note 1) "Green" Device (Note 2) C Q1 PNP DDTB122LU R2 B 220 E R1 10K S DMN601TK G Q2 NMOS D
C_Q1
6
Fig. 1: SOT-363
B_Q1
5
S_Q2
4
Mechanical Data
* * * * * * * *
Case: SOT-363 Case Material: Molded Plastic. "Green Molding" Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL- STD -202, Method 208 Marking & Type Code Information: See Last Page Ordering Information: See Last Page Weight: 0.016 grams (approximate) Sub-Component P/N DDTB122LU_DIE DMN601TK_DIE (ESD Protected) Reference Q1 Q2
1
2
3
E_Q1
G_Q2
D_Q2
Fig 2 : Schematic and Pin Configuration
Device Type PNP Transistor N-MOSFET
R1(NOM) 10K
R2(NOM) 220
Figure 2 2
Maximum Ratings, Total Device @ TA = 25C unless otherwise specified
Characteristic Power Dissipation (Note 3) Power Derating Factor above 37.5C Output Current Symbol Pd Pder Iout Value 200 1.6 400 Unit mW mW/C mA
Thermal Characteristics
Characteristic Junction Operation and Storage Temperature Range Thermal Resistance, Junction to Ambient Air (Note 3) (Equivalent to one heated junction of PNP transistor)
Notes:
Symbol Tj, Tstg RJA
Value -55 to +150 625
Unit C C/W
1. No purposefully added lead. 2 . Diodes Inc.'s "Green" policy can be found on our website at http:/www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
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NEW PRODUCT
Maximum Ratings: @ TA = 25C unless otherwise specified Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Supply Voltage Input Voltage Output Current Symbol VCBO VCEO Vcc Vin IC Value -50 -50 -50 +5 to -6 -400 Unit V V V V mA
Sub-Component Device: @ TA = 25C unless otherwise specified ESD Protected N-Channel MOSFET (Q2)
Characteristic Drain-Source Voltage Drain Gate Voltage (RGS 1MOhm) Gate-Source Voltage Drain Current (Page 1: Note 3) Continuous Source Current Continuous Pulsed (tp<50 uS) Continuous (Vgs = 10V) Pulsed (tp <10 uS, Duty Cycle <1%) Symbol VDSS VDGR VGSS ID IS Value 60 60 +/-20 +/-40 300 800 300 Unit V V V mA mA
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Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
@ TA = 25C unless otherwise specified Max -100 -500 -1 -0.3 -500 -0.15 -0.15 -0.3 -0.2 -0.25 -0.3 1.125 -0.3 -28 -1.3 -2.2 -5.5 0.286 55 Unit nA nA mA V V V V nA V V V V V V Vdc Vdc mA V V K K Test Condition VCB = -50V, IE = 0 VCE = -50V, IB = 0 VEB = -5V, IC = 0 IC = -10 uA, IE = 0 IC = -2 mA, IB = 0 VCE = -5V, IC = -100uA VCC = -5V, VB = -0.05V, RL = 1K VCC = -50V, VI = 0V IC = -10 mA, IB = -0.3 mA IC = -200mA, IB = -20mA IC = -100mA, IB = -1mA IC = -300mA, IB= -30mA IC = -400mA, IB= -40mA IC = -500mA, IB = -50mA IC = -400mA, IB = -20mA VCE = -5V, IC = -50 mA VCE = -5V, IC =- 100 mA VCE = -5V, IC = -200 mA VCE = -5V, IC = -400 mA VO = -0.3V, IIC = -2 mA VCC = -5V, VB = -2.5V, Io/II = -50mA /-2.5mA VI = -5V VCE = -5V, IC = -400mA IC = -50mA, IB = -5mA IC = -400mA, IB = -20mA VCE = -10V, IE = -5mA, f = 100MHz VCB = -10V, IE = 0A, f = 1MHz
NEW PRODUCT
Characteristic OFF CHARACTERISTICS Collector-Base Cut Off Current Collector-Emitter Cut Off Current Emitter-Base Cut Off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Input Off Voltage Output Voltage Ouput Current (leakage current same as ICEO) ON CHARACTERISTICS Collector-Emitter Saturation Voltage
Symbol ICBO ICEO IEBO V(BR)CBO V(BR)CEO VI(OFF) VOH IO(OFF) VCE(SAT)
Min -50 -50 -4.9
Typ -0.55 220 260 265 225 -1.5 -0.1 -18 -1.2 -1.9 -5.25 0.22 10 45
Equivalent on-resistance* DC Current Gain
RCE(SAT) hFE
70 70 70 70
Input On Voltage Output Voltage (equivalent to VCE(SAT)) Input Current Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage Input Resistor (Base), +/- 30% Pull-up Resistor (Base to Vcc supply), +/- 30% Resistor Ratio (Input Resistor/Pullup resistor) SMALL SIGNAL CHARACTERISTICS Transition Frequency (gain bandwidth product) Collector capacitance, (Ccbo-Output Capacitance)
* Pulse Test: Pulse width, tp <300 us, Duty Cycle, d 0.02
VI(ON) VO(on) (VOL) Ii VBE(ON) VBE(SAT) R2 R1 R1/R2
-2.45 0.154 36
fT CC

200 20

MHz pF
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Electrical Characteristics: ESD Protected N Channel MOSFET (Q2) @ TA = 25C unless otherwise specified
NEW PRODUCT
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage, BVDSS Zero Gate Voltage Drain Current (Drain Leakage Current) Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ON CHARACTERISTICS (Note 4) Gate Source Threshold Voltage (Control Supply Voltage) Static Drain-Source On-State Voltage On-State Drain Current Static Drain-Source On Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS* Turn-On Delay Time Turn-Off Delay Time
Symbol V(BR)DSS IDSS IGSSF IGSSR
Min 60
Typ
Max 1 10 -10
Unit V A A A
Test Condition VGS = 0V, ID = 10uA VGS =0V, VDS = 60V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V
VGS(th) VDS(on) ID(on) RDS(on) gFS
1 500 80
1.6 0.09 0.6 1.6 1.2 260
2.5 1.5 3.75 3 2
V V mA mS
VDS = VGS, ID = 0.25mA VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VGS = 10V, VDS 2*VDS(ON) VGS = 5V, ID = 50mA VGS = 10V, ID = 500mA VDS 2*VDS(ON), ID = 200 mA
Ciss Coss Crss td(on) td(off)

50 25 5 20 40
pF pF pF ns ns VDD = 30V, VGS =10V, ID = 200mA, RG = 25 Ohm, RL = 150 Ohm VGS = 0V, IS = 300 mA* VDS = -25V, VGS = 0V, f = 1MHz
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward On-Voltage Maximum Continuous Drain-Source Diode Forward Current (Reverse Drain Current) Maximum Pulsed Drain-Source Diode Forward Current VSD IS ISM 0.88 1.5 300 800 V mA mA
* Pulse Test: Pulse width, tp <300 us, Duty Cycle, d 0.02 Notes: 4. Short duration test pulse used to minimize self-heating effect.
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Typical Characteristics
NEW PRODUCT
250
500
lb = 8mA lb = 7mA lb = 6mA lb = 5mA lb = 4mA
450
TA = 25C
PD, POWER DISSIPATION (mW)
IC, COLLECTOR CURRENT (mA)
200
lb = 9mA
400 350 300
lb = 10mA
lb = 3mA
150
lb = 2mA
250 200 150 100 50
lb = 1mA
100
50
0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 3, Max Power Dissipation vs Ambient Temperature
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 4, Output Current vs. Voltage Drop (Pass Element PNP)
Pre-Biased PNP Transistor Characteristics
0.6
0.3
IC/IB = 10
VCE(SAT), COLLECTOR VOLTAGE (V)
VCE(SAT), COLLECTOR VOLTAGE (V)
IC/IB = 20 0.5
0.2
0.4
TA = -55C
0.3
TA = 25C TA = 125C
0.1
TA = 150C
TA = 85C
0.2
TA = 150C
TA =-55C TA = 125C TA = 25C TA = 85C
0.1
0 0.01 0.1 1
0 0.01
0.1
1
IC, COLLECTOR CURRENT (A) Fig. 5 VCE(SAT) vs. IC @ IC/IB = 10
12
15
IC, COLLECTOR CURRENT (A) Fig. 6 VCE(SAT) vs. IC @ IC/IB = 20
VBE(SAT), BASE EMITTER VOLTAGE (V)
IC/IB = 10
VBE(ON), BASE EMITTER VOLTAGE (V)
10
12
IC/IB = 10 VCE = 5V
8
9
6
6
4
TA = 125C TA = 150C
TA = -55C
2
TA = 25C TA = 85C
3
TA = 125C TA = 150C
TA = -55C TA = 25C
TA = 85C
0 1 10 100 1000
0 10 100 1000 10000
IC, COLLECTOR CURRENT (mA) Fig. 7 VBE(SAT) vs. IC @ IC/IB = 10
IC, COLLECTOR CURRENT (mA) Fig. 8 VBE(ON) vs. IC @ VCE = 5V
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400
VCE = 5V
NEW PRODUCT
TA = 150C
hFE, DC CURRENT GAIN
TA = 125C
300
TA = 85C
200
TA = 25C
100
TA =-55C
0 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 9 hFE vs. IC @ VCE = 5V
Typical N-Channel MOSFET (ESD Protected) Characteristics
1.4 VGS = 10V 1.2 VGS = 6V
0.8 VDS = 10V 0.7
TA = 150C TA = 125C
TA = -55C TA = 25C TA = 85C
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
5
0.6 0.5
1.0 VGS = 8V 0.8
VGS = 5V
0.4
0.6
VGS = 4V
0.3 0.2
0.4
0.2
VGS = 3V
0.1
0 0 1 2 3 4
0 0 1 2 3 4 5 6
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V) Fig. 11 Transfer Characteristics
2
VDS = VGS
10
VDS = 10V ID = 1mA Pulsed
VGS(th), GATE THRESHOLD VOLTAGE (V)
VGS = 10V Pulsed TA = 125C TA = 150C
1.5
TA = 85C
1
1
TA = -55C
0.5
TA = 25C
TA = 0C
TA = -25C
0 -50
-25
0
25
50
75
100
125
150
0.1 0.001
TJ, JUNCTION TEMPERATURE (C) Fig. 12 Gate Threshold Voltage vs. Junction Temperature
0.1 0.01 ID, DRAIN CURRENT (A) Fig. 13 Static Drain-Source On-Resistance vs. Drain Current
1
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10
VGS = 5V Pulsed
7 6
ID = 300mA TA = 25C Pulsed
NEW PRODUCT
TA = 125C TA = 150C
TA = 85C
5 4
1
TA = -55C TA = 0C
3 2
ID = 150mA
TA = 25C
TA = -25C
1
0.1 0.001 0.01 0.1 1
0 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE (V) Fig. 15 Static Drain-Source On-Resistance vs. Gate-Source Voltage
1
VGS = 10V Pulsed
ID, DRAIN CURRENT (A) Fig. 14 Static Drain-Source On-Resistance vs. Drain Current
2.5
ID = 300mA
VGS = 0V Pulsed
2
ID = 150mA
IDR, REVERSE DRAIN CURRENT (A)
TA = 125C TA = 150C
0.1
TA = 85C
1.5
TA = 25C
1
0.01
TA = 0C
0.5
TA = -25C
TA = -55C
0 -75 -50 -25 0 25 50 75 100 125 150
0.001 0 0.5 1 1.5
Tj, JUNCTION TEMPERATURE (C) Fig. 16 Static Drain-Source On-State Resistance vs. Junction Temperature
VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 17 Reverse Drain Current vs. Source-Drain Voltage
1 IS, REVERSE DRAIN CURRENT (A)
VGS = 10V
gFS, FORWARD TRANSCONDUCTANCE (mS)
700 600
TA = -25C
TA= 25C Pulsed
500
TA = -55C TA = 25C
0.1
400 300 200 100 0 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Fig. 19 Forward Transconductance vs. Drain Current (VDS > ID *RDS(ON))
TA = 150C TA = 125C T = 85C A
0.01
VGS = 0V
0.001 0 0.5 1 VSD, BODY DIODE FORWARD VOLTAGE (V) Fig. 18 Reverse Drain Current vs. Source-Drain Voltage
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Application Details
NEW PRODUCT
*
PNP Transistor (DDTB122LU) and ESD Protected N-MOSFET (DMN601TK) integrated as one in LMN400E01 can be used as a discrete entity for general application or as an integrated circuit to function as a Load Switch. When it is used as the latter as shown in Fig. 20, various input voltage sources can be used as long as it does not exceed the maximum ratings of the device. These devices are designed to deliver continuous output load current up to a maximum of 400 mA. The MOSFET Switch draws no current, hence loading of control circuitry is prevented. Care must be taken for higher levels of dissipation while designing for higher load conditions. These devices provide high power and also consume less space. The product mainly helps in optimizing power usage, thereby conserving battery life in a controlled load system like portable battery powered applications. (Please see Fig. 21 for one example of a typical application circuit used in conjunction with a voltage regulator as a part of power management system).
DDTB122LU VIN
E Q1 B
C PNP
VOUT
R1 10K
LOAD
R2
220 Q2 D
DMN601TK
S
N-MOSFET
Control
G
Fig 20 : Circuit Diagram
Typical Application Circuit
5VSupply U1 U3 Vin U2 Vin 1
Load Switch Point of Load
IN OUT
Control Logic Circuit (PIC, Comparator etc)
E_Q1 G_Q2 D_Q2
C_Q1 B_Q1 S_Q2
6 5
Vout
OUT1
Control2 3
4 GND
GND
LMN400E01 Diodes Inc.
Voltage Regulator
Fig 21
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Ordering Information
(Note 4) Marking Code PM5 Packaging SOT-363 Shipping 3000/Tape & Reel
NEW PRODUCT
Device LMN400E01-7
Notes:
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PM5
PM5 = Product Type Marking Code, YM = Date Code Marking Y = Year, e.g., T = 2006 M = Month, e.g., 9 = September
Fig. 22 Date Code Key Year Code Month Code Jan 1 2006 T Feb 2 March 3 Apr 4 2007 U May 5 Jun 6 Jul 7 2008 V Aug 8 Sep 9 Oct O 2009 W Nov N Dec D
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Package Details
NEW PRODUCT
SOT-363
A
Dim A
BC
Min 0.10 1.15 2.00 0.30 1.80 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
B C D
0.65 Nominal
G H K M
F H J K
D F L
J
L M
All Dimensions in mm Fig. 23
Suggested Pad Layout: (Based on IPC-SM-782)
E
E
Figure 14 Dimensions Z G X Y C E SOT-363* 2.5 1.3 0.42 0.6 1.9 0.65
Z
G
C
Y
X
Fig. 24
* Typical dimensions in mm
IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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